Global QYResearch, in its recent report “Global FeRAM Market (Types: Serial Memory, Parallel Memory; Application: Smart Meters, Automotive Electronics, Medical Devices, Wearable Devices)”, estimates that the global market for FeRAM is anticipated to grow at a considerable CAGR of over 11% between 2017 and 2025, and increase to the value of around $570 million by 2025. The growing acceptance of FeRAM-based smart meters is recognized as one of the key trends that will add grip in the global market in near future. FeRAM-based smart meters have the feature to write data 1000 times quicker than meters using other flash memory such as DRAM. Also, FeRAM devours extremely less power which enables smart meter manufacturers to incorporate RAM as cost-effective memory hardware in their products. Moreover, FeRAM or F-RAM also enhances the duration and efficiency of smart meters as it requires less power and offers superior write speed. These features will result in an exponential growth in adoption by smart meter vendors, consequently boosting the FeRAM market through the forecasting era.

Download Sample copy of this report@

Competitive Landscape

FeRAM is a promising technology and has achieved consideration in some applications such as smart cards, smart meters, and event data recorder (EDR) in the automotive segment. The market is distinguished by existence of a very few key vendors. FeRAM delivers faster data rewrite, higher rewrite durability, and lower power consumption than the non-volatile memories used today. As a consequence, there will be a rising demand for FeRAMs, in turn, escalating the competition among vendors to amplify their revenue share from the market. One of the leading vendors ROHM lately announced the availability of 64-Kbit FeRAM with a serial bus that is optimized for smart meters, healthcare equipment, car navigation systems, and other applications requiring frequent log data acquisition.

View Detail Report With Complete Table of Content, List of Table and Figure@

Companies Covered

Some of the vital players in the FeRAM market are International Business Machines (IBM) Corporation, Toshiba Corporation, Texas Instruments Inc., Infineon Technologies Inc., Cypress Semiconductor Corporation, Lapis Semiconductor Co. Ltd. and Fujitsu Ltd. Fujitsu Ltd. was the initial semiconductor manufacturer to build embedded ferroelectric ram (FeRAM).

The report is readily available and can be dispatched within 4hr after payment confirmation.

Buy this premium research report –

Would like to place an order or any question, please feel free to contact at | +44 20 3286 1546



Please enter your comment!
Please enter your name here